Chemically Amplified Photosensitive Poly(benzoxazole)

Calibration of Chemically Amplified Resist Models

Direct measurement of the reaction front in chemically amplified photoresists.

The continuing drive by the semiconductor industry to fabricate smaller structures using photolithography will soon require dimensional control at length scales comparable to the size of the polymeric molecules in the materials used to pattern them. The current technology, chemically amplified photoresists, uses a complex reaction-diffusion process to delineate patterned areas with high spatial...

Photosensitive gelatin.

Employing photodestructible surfactants in gelatin-based aqueous gels presents novel possibilities for controlling colloidal and aggregation properties of surfactant gelatin complexes. Light-triggered breakdown of the gelatin-bound photosurfactant aggregates causes dramatic changes in viscosity and aggregation.

Determining Free Volume Changes During the PEB and PAB of a Chemically Amplified Resist

Chemically amplified resists provide some trade-off between resolution and amplification. While it is necessary for a single photogenerated acid to be mobile enough to cause several deprotection reactions, this inevitably leads to some linewidth spread. An acid molecule mobile enough to travel to several reaction sites is also mobile enough to move into unexposed regions of the resist. In order...

Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography

Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography The aqueous base development step is one of the most critical processes in modern lithographic imaging technology. Sinusoidal modulation of the exposing light intensity must be converted to a step function in the resist film during the development process. Thus, in designing high-performance resi...